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 RMPA0963
PRELIMINARY
April 2005
Features
38% CDMA/WCDMA efficiency at +28 dBm Pout 14% CDMAA/WCDMA efficiency (80 mA total current) at +16 dBm Pout Meets HSDPA performance requirements Linear operation in low-power mode up to +19 dBm 50% AMPS mode efficiency at +31 dBm Pout Low quiescent current (Iccq): 20 mA in low-power mode Single positive-supply operation with low power and shutdown modes * 3.4V typical Vcc operation * Low Vref (2.85V) compatible with advanced handset chipsets Compact Lead-free compliant LCC package - (4.0 X 4.0 x 1.5 mm nominal) Industry standard pinout Internally matched to 50 Ohms and DC blocked RF input/output Meets IS-95/CDMA2000-1XRTT/WCDMA performance requirements
General Description
The RMPA0963 Power Amplifier Module (PAM) is Fairchild's latest innovation in 50 Ohm matched, surface mount modules targeting Cellular CDMA/WCDMA/HSDPA, AMPS and Wireless Local Loop (WLL) applications. Answering the call for ultra-low DC power consumption and extended battery life in portable electronics, the RMPA0963 uses novel proprietary circuitry to dramatically reduce amplifier current at low to medium RF output power levels (< +16 dBm), where the handset most often operates. A simple two-state Vmode control is all that is needed to reduce operating current by more than 50% at 16 dBm output power, and quiescent current (Iccq) by as much as 70% compared to traditional power-saving methods. No additional circuitry, such as DC-to-DC converters, are required to achieve this remarkable improvement in amplifier efficiency. Further, the 4x4x1.5 mm LCC package is pin-compatible and a drop-in replacement for last generation 4x4 mm PAMs widely used today, minimizing the design time to apply this performanceenhancing technology. The multi-stage GaAs Microwave Monolithic Integrated Circuit (MMIC) is manufactured using Fairchild RF's InGaP Heterojunction Bipolar Transistor (HBT) process.
Device
Functional Block Diagram
(Top View) MMIC
Vref 1 Vmode 2 3 4 5 INPUT MATCH BIAS/MODE SWITCH OUTPUT MATCH
10 GND 9 8 GND RF OUT
GND RF IN Vcc1
7 GND 6 Vcc2
11 (paddle ground on package bottom)
(c)2005 Fairchild Semiconductor Corporation
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RMPA0963
Rev. E
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RMPA0963 Cellular CDMA, CDMA2000-1X and WCDMA Power Amplifier Module
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Cellular CDMA, CDMA2000-1X and WCDMA Power Amplifier Module (Preliminary)
RMPA0963
Absolute Maximum Ratings1
Symbol
Vcc1, Vcc2 Vref Vmode Pin Tstg Supply Voltages Reference Voltage Power Control Voltage RF Input Power Storage Temperature
Parameter
Value
5.0 2.6 to 3.5 3.5 +10 -55 to +150
Units
V V V dBm C
Note: 1. No permanent damage with one parameter set at extreme limit. Other parameters set to typical values.
Electrical Characteristics1
Symbol
f Gp Po PAEd Itot CDMA ACPR1 ACPR2 WCDMA ACLR1 ACLR2
Parameter
Operating Frequency Power Gain Linear Output Power PAEd (digital) @ +28 dBm PAEd (digital) @ +16 dBm High Power Total Current Low Power Total Current Adjacent Channel Power Ratio 885 KHz Offset 1.98 MHz Offset Adjacent Channel Leakage Ratio 5 MHz Offset 10 MHz Offset
Min
824
Typ
Max
849
Units
MHz dB dB dBm dBm
Comments
CDMA/WCDMA Operation 30 20 28 16 38 14 480 80 -50 -55 -60 -65 Po=+28 dBm; Vmode=0V Po=+16 dBm; VmodeP2.0V Vmode=0V VmodeP2.0V Vmode=0V VmodeP2.0V Po=+28 dBm, Vmode=0V Po=+16 dBm, VmodeP2.0V IS-95 A/B Modulation dBc dBc dBc dBc Po=+28 dBm; Vmode=0V Po=+16 dBm; VmodeP2.0V Po=+28 dBm; Vmode=0V Po=+16 dBm; VmodeP2.0V WCDMA Modulation 3GPP 3.2 03-00 DPCCH +1 DCDCH -40 -45 -53 -60 29 50 2.0:1 4 -134 -30 -60
3
% % mA mA
dBc dBc dBc dBc dB % 2.5:1 dB dBm/Hz dBc dBc C mA mA 5 A
Po=+28 dBm; Vmode=0V Po=+16 dBm; VmodeP2.0V Po=+28 dBm; Vmode=0V Po=+16 dBm; VmodeP2.0V Po=+31 dBm Po=+31 dBm
AMPS Operation Gp PAEa VSWR NF Rx No 2fo-5fo S Tc Iccq Iref Icc(off) Power Gain Power-Added Efficiency (analog) Input Impedance Noise Figure3 Receive Band Noise Power3 Harmonic Suppression3 Spurious Outputs2,3 Ruggedness w/ Load Mismatch Case Operating Temperature Quiescent Current Reference Current Shutdown Leakage Current DC Characteristics 20 2 1 VmodeP2.0V Po+28 dBm No applied RF signal -30
General Characteristics
Po<+28 dBm; 869 to 894MHz PoO+28 dBm Load VSWRO5.0:1 No permanent damage.
10:1 85
Notes: 1. All parameters met at Tc = +25C, Vcc = +3.4V, Vref = 2.85V and load VSWRO1.2:1, unless otherwise noted. 2. All phase angles. 3. Guaranteed by design.
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Rev. E
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Cellular CDMA, CDMA2000-1X and WCDMA Power Amplifier Module (Preliminary)
RMPA0963
Recommended Operating Conditions
Symbol
f Vcc1, Vcc2 Vref Supply Voltage Reference Voltage (Operating) (Shutdown) Bias Control Voltage (Low-Power) (High-Power) Linear Output Power (High-Power) (Low-Power) Case Operating Temperature -30
Parameter
Operating Frequency
Min
824 3.0 2.7 0 1.8 0
Typ
3.4 2.85
Max
849 4.2 3.1 0.5 3.0 0.5 +28 +19 +85
Units
MHz V V V V V dBm dBm C
Vmode
2.0
Pout
+16
Tc
DC Turn-On Sequence
1) Vcc1 = Vcc2 = 3.4V (typical) 2) Vref = 2.85V (typical) 3) High-Power: Vmode = 0V (Pout > 16 dBm) Low-Power: Vmode = 2V (Pout < 16 dBm)
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RMPA0963
Rev. E
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Cellular CDMA, CDMA2000-1X and WCDMA Power Amplifier Module (Preliminary)
RMPA0963
Evaluation Board Layout
1 4 5 3 7
2
5 6
8 6
Materials List
Qty
1 2 8 Ref 2 2 2 1 1 1 A/R A/R
Item No.
1 2 3 4 5 5 (Alt) 6 7 7 (Alt) 8 9 10
Part Number
G657549-1 V2 #142-0701-841 #2340-5211TN G657583 GRM39X7R102K50V ECJ-1VB1H102K C3216X5R1A335M GRM39Y5V104Z16V ECJ-1VB1C104K GRM39X7R331K50V SN63 SN96 PC Board
Description
SMA Connector Terminals Assembly, RMPA0963 1000pF Capacitor (0603) 1000pF Capacitor (0603) 3.3F Capacitor (1206) 0.1F Capacitor (0603) 0.1F Capacitor (0603) 330pF Capacitor (0603) Solder Paste Solder Paste
Vendor
Fairchild Johnson 3M Fairchild Murata Panasonic TDK Murata Panasonic Murata Indium Corp. Indium Corp.
Evaluation Board Schematic
0.1 F 1000 pF Vmode 50 Ohm TRL Vcc1 3.3 F Vref
1 2 4 5 11 3,7,9,10
8
50 Ohm TRL
SMA1 RF IN
SMA2 RF OUT Vcc2
6
1000 pF
330 pF (package base)
4
3.3 F
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RMPA0963
Rev. E
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Cellular CDMA, CDMA2000-1X and WCDMA Power Amplifier Module (Preliminary)
0963
XYTT
Z
0963
XYTT
Z
RMPA0963
Package Outline
I/O 1 INDICATOR TOP VIEW 1 2 10 9 8
(4.00mm
+.100 -.050 )
SQUARE
3 4 5
6
1.60mm MAX.
FRONT VIEW .25mm TYP. 3.50mm TYP. See Detail A .40mm .30mm TYP. .85mm TYP. 11 2 1 1.08mm 1.84mm BOTTOM VIEW .18mm DETAIL A. TYP. 3.65mm .10mm .10mm .40mm .45mm
Signal Descriptions
Pin #
1 2 3 4 5 6 7 8 9 10 11
Signal Name
Vref Vmode GND RF In Vcc1 Vcc2 GND RF Out GND GND GND
Description
Reference Voltage High Power/Low Power Mode Control Ground RF Input Signal Supply Voltage to Input Stage Supply Voltage to Output Stage Ground RF Output Signal Ground Ground Paddle Ground
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Rev. E
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0963
XYTT
Cellular CDMA, CDMA2000-1X and WCDMA Power Amplifier Module (Preliminary)
Z
RMPA0963
Application Information
CAUTION: THIS IS AN ESD SENSITIVE DEVICE
Precautions to Avoid Permanent Device Damage:
* Cleanliness: Observe proper handling procedures to ensure clean devices and PCBs. Devices should remain in their original packaging until component placement to ensure no contamination or damage to RF, DC & ground contact areas. * Device Cleaning: Standard board cleaning techniques should not present device problems provided that the boards are properly dried to remove solvents or water residues. * Static Sensitivity: Follow ESD precautions to protect against ESD damage: * A properly grounded static-dissipative surface on which to place devices. * Static-dissipative floor or mat. * A properly grounded conductive wrist strap for each person to wear while handling devices. * General Handling: Handle the package on the top with a vacuum collet or along the edges with a sharp pair of bent tweezers. Avoiding damaging the RF, DC, & ground contacts on the package bottom. Do not apply excessive pressure to the top of the lid. * Device Storage: Devices are supplied in heat-sealed, moisture-barrier bags. In this condition, devices are protected and require no special storage conditions. Once the sealed bag has been opened, devices should be stored in a dry nitrogen environment.
* Reflow soldering is the preferred method of SMT attachment. Hand soldering is not recommended. Reflow Profile * Ramp-up: During this stage the solvents are evaporated from the solder paste. Care should be taken to prevent rapid oxidation (or paste slump) and solder bursts caused by violent solvent out-gassing. A typical heating rate is 12C/sec. * Pre-heat/soak: The soak temperature stage serves two purposes; the flux is activated and the board and devices achieve a uniform temperature. The recommended soak condition is: 120-150 seconds at 150C. * Reflow Zone: If the temperature is too high, then devices may be damaged by mechanical stress due to thermal mismatch or there may be problems due to excessive solder oxidation. Excessive time at temperature can enhance the formation of inter-metallic compounds at the lead/ board interface and may lead to early mechanical failure of the joint. Reflow must occur prior to the flux being completely driven off. The duration of peak reflow temperature should not exceed 10 seconds. Maximum soldering temperatures should be in the range 215-220C, with a maximum limit of 225C. * Cooling Zone: Steep thermal gradients may give rise to excessive thermal shock. However, rapid cooling promotes a finer grain structure and a more crack-resistant solder joint. The illustration below indicates the recommended soldering profile. * Solder Joint Characteristics: Proper operation of this device depends on a reliable void-free attachment of the heatsink to the PWB. The solder joint should be 95% void-free and be a consistent thickness. * Rework Considerations: Rework of a device attached to a board is limited to reflow of the solder with a heat gun. The device should not be subjected to more than 225C and reflow solder in the molten state for more than 5 seconds. No more than 2 rework operations should be performed.
Device Usage:
Fairchild RF recommends the following procedures prior to assembly. * Dry-bake devices at 125C for 24 hours minimum. Note: The shipping trays cannot withstand 125C baking temperature * Assemble the dry-baked devices within 7 days of removal from the oven. * During the 7-day period, the devices must be stored in an environment of less than 60% relative humidity and a maximum temperature of 30C * If the 7-day period or the environmental conditions have been exceeded, then the dry-bake procedure must be repeated.
Recommended Solder Reflow Profile
240 220 200 183C 180 160 140 DEG (C) 120 100 80 60 40 20 0 0 60 120 180 TIME (SEC) 240 300 1C/SEC SOAK AT 150C FOR 60 SEC 45 SEC (MAX) ABOVE 183C 1C/SEC 10 SEC
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RMPA0963
Rev. E
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Solder Materials & Temperature Profile:
Cellular CDMA, CDMA2000-1X and WCDMA Power Amplifier Module (Preliminary)
RMPA0963
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I15
7
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Rev. E
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Cellular CDMA, CDMA2000-1X and WCDMA Power Amplifier Module (Preliminary)


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